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OM6017SA OM6019SA OM6018SA OM6020SA
POWER MOSFET IN HERMETIC ISOLATED TO-254AA PACKAGE
100V Thru 500V, Up To 25 Amp, N-Channel MOSFET In Hermetic Metal Package
FEATURES
* * * * * * Isolated Hermetic Metal Package Fast Switching Low RDS(on) Available Screened To MIL-S-19500, TX, TXV And S Levels Same as IRFM 150 - 450 Series Ceramic Feedthroughs Available
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET and packaging technology. They are ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.
MAXIMUM RATINGS @ 25C
PART NUMBER OM6017SA OM6018SA OM6019SA OM6020SA VDS 100 V 200 V 400 V 500 V RDS(on) .065 .100 .33 .42 ID 25 A 25 A 13 A 11 A
3.1
SCHEMATIC
POWER RATING
4 11 R4 Supersedes 1 07 R3
3.1 - 85
3.1
OM6017SA - OM6020SA
ELECTRICAL CHARACTERISTICS:
STATIC P/N OM6017SA
Parameter BVDSS VGS(th) IGSSF IGSSR IDSS Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Forward Gate-Body Leakage Reverse Zero Gate Voltage Drain Current ID(on) VDS(on) RDS(on) RDS(on) On-State Drain Current1 Static Drain-Source On-State Voltage1 Static Drain-Source On-State Resistance1 Static Drain-Source On-State Resistance1 35 1.1 0.1 0.2
(TC = 25C unless otherwise noted)
ELECTRICAL CHARACTERISTICS:
STATIC P/N OM6018SA
Parameter BVDSS VGS(th) IGSSF IGSSR IDSS Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Forward Gate-Body Leakage Reverse Zero Gate Voltage Drain Current ID(on) VDS(on) RDS(on) RDS(on) On-State Drain Current1 Static Drain-Source On-State Voltage1 Static Drain-Source On-State Resistance1 Static Drain-Source On-State Resistance1 30 0.1 0.2
(TC = 25C unless otherwise noted)
Min. Typ. Max. Units Test Conditions 100 2.0 4.0 100 - 100 0.25 1.0 V V nA nA mA mA A 1.3 V VGS = 0, ID = 250 mA VDS = VGS, ID = 250 mA VGS = +20 V VGS = -20 V VDS = Max. Rat., VGS = 0 VDS = 0.8 Max. Rat., VGS = 0, TC = 125 C VDS 2 VDS(on), VGS = 10 V VGS = 10 V, ID = 20 A VGS = 10 V, ID = 20 A VGS = 10 V, ID = 20 A, TC = 125 C
Min. Typ. Max. Units Test Conditions 200 2.0 4.0 100 -100 0.25 1.0 V V nA nA mA mA A 1.36 1.60 .085 .100 0.14 0.17 V VGS = 0, ID = 250 mA VDS = VGS, ID = 250 mA VGS = + 20 V VGS = - 20 V VDS = Max. Rat., VGS = 0 VDS = 0.8 Max. Rat., VGS = 0, TC = 125 C VDS 2 VDS(on), VGS = 10 V VGS = 10 V, ID = 16 A VGS = 10 V, ID = 16 A VGS = 10 V, ID = 16 A, TC = 125 C
0.55 0.65 .09 0.11
gfs Ciss Coss Crss td(on) tr td(off) tf
9.0 2700 1300 470 28 45 100 50
S(W ) VDS 2 VDS(on), ID = 20 A pF pF pF ns ns ns ns VGS = 0 VDS = 25 V f = 1 MHz VDD = 30 V, ID @ 20 A Rg = 5.0 W , VG = 10V
(MOSFET switching times are essentially independent of operating temperature.)
gfs Ciss Coss Crss td(on) tr td(off) tf
10.0 2400 600 250 25 60 85 38
S(W ) VDS 2 VDS(on), ID = 16 A pF pF pF ns ns ns ns VGS = 0 VDS = 25 V f = 1 MHz VDD = 75 V, ID @ 16 A Rg = 5.0 W ,VGS = 10V
(MOSFET switching times are essentially independent of operating temperature.)
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
IS ISM VSD trr Continuous Source Current (Body Diode) Source Current1 (Body Diode) Diode Forward Voltage1 Reverse Recovery Time 400 - 40 - 160 - 2.5 A A V ns
Modified MOSPOWER symbol showing the integral P-N Junction rectifier.
G D
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
IS ISM
S
Continuous Source Current (Body Diode) Source Current1 (Body Diode) Diode Forward Voltage1 Reverse Recovery Time 350
- 30 - 120 -2
TC = 25 C, IS = -40 A, VGS = 0 TJ = 150 C, IF = IS, dlF/ds = 100 A/ms
VSD trr
ns
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
(W ) A A V
Forward Transductance1
(W )
3.1 - 86
DYNAMIC
DYNAMIC
Forward Transductance1
Modified MOSPOWER symbol showing the integral P-N Junction rectifier.
G
D
S
TC = 25 C, IS = -30 A, VGS = 0 TJ = 150 C, IF = IS, dlF/ds = 100 A/ms
ELECTRICAL CHARACTERISTICS:
STATIC P/N OM6019SA
Parameter BVDSS VGS(th) IGSSF IGSSR IDSS Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Forward Gate-Body Leakage Reverse Zero Gate Voltage Drain Current ID(on) VDS(on) RDS(on) RDS(on) On-State Drain Current1 Static Drain-Source On-State Voltage1 Static Drain-Source On-State Resistance1 Static Drain-Source On-State Resistance1 15 2.0 0.25 0.1 0.2
(TC = 25C unless otherwise noted)
ELECTRICAL CHARACTERISTICS:
STATIC P/N OM6020SA
Parameter BVDSS VGS(th) IGSSF IGSSR IDSS Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Forward Gate-Body Leakage Reverse Zero Gate Voltage Drain Current ID(on) VDS(on) RDS(on) RDS(on) On-State Drain Current1 Static Drain-Source On-State Voltage1 Static Drain-Source On-State Resistance1 Static Drain-Source On-State Resistance1 13 2.1 0.3 0.1 0.2
(TC = 25C unless otherwise noted)
Min. Typ. Max. Units Test Conditions 400 2.0 4.0 100 - 100 0.25 1.0 V V nA nA mA mA A 2.64 .33 V VGS = 0, ID = 250 mA VDS = VGS, ID = 250 mA VGS = +20 V VGS = - 20 V VDS = Max. Rat., VGS = 0 VDS = 0.8 Max. Rat., VGS = 0, TC = 125 C VDS 2 VDS(on), VGS = 10 V VGS = 10 V, ID = 8.0 A VGS = 10 V, ID = 8.0 A VGS = 10 V, ID = 8.0 A, TC = 125 C
Min. Typ. Max. Units Test Conditions 500 2.0 4.0 100 - 100 0.25 1.0 V V nA nA mA mA A 2.94 0.42 V VGS = 0, ID = 250 mA VDS = VGS, ID = 250 mA VGS = +20 V VGS = - 20 V VDS = Max. Rat., VGS = 0 VDS = 0.8 Max. Rat., VGS = 0, TC = 125 C VDS 2 VDS(on), VGS = 10 V VGS = 10 V, ID = 7.0 A VGS = 10 V, ID = 7.0 A VGS = 10 V, ID = 7.0 A, TC = 125 C
0.50 0.66
0.66 0.88
gfs Ciss Coss Crss td(on) tr td(off) tf
Forward Transductance1 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
6.0 2900 450 150 30 40 80 30
S(W ) VDS 2 VDS(on), ID = 8.0 A pF pF pF ns ns ns ns VGS = 0 VDS = 25 V f = 1 MHz VDD = 200 V, ID @ 8.0 A Rg =5.0 W , VGS =10V
(MOSFET switching times are essentially independent of operating temperature.)
gfs Ciss Coss Crss td(on) tr td(off) tf
Forward Transductance1 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
6.0 2600 280 40 30 46 75 31
S(W ) VDS 2 VDS(on), ID = 7.0 A pF pF pF ns ns ns ns VGS = 0 VDS = 25 V f = 1 MHz VDD = 210 V, ID @ 7.0 A Rg = 5.0 W , VGS = 10 V
(MOSFET switching times are essentially independent of operating temperature.)
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
IS ISM VSD trr Continuous Source Current (Body Diode) Source Current1 (Body Diode) Diode Forward Voltage1 Reverse Recovery Time 600 - 15 - 60 - 1.6 A A V ns
Modified MOSPOWER symbol showing the integral P-N Junction rectifier.
G D
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
IS ISM
S
Continuous Source Current (Body Diode) Source Current1 (Body Diode) Diode Forward Voltage1 Reverse Recovery Time 700
- 13 - 52 - 1.4
TC = 25 C, IS = -15 A, VGS = 0 TJ = 100 C, IF = IS, dlF/ds = 100 A/ms
VSD trr
ns
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
(W ) A A V
(W )
3.1 - 87
DYNAMIC
DYNAMIC
Modified MOSPOWER symbol showing the integral P-N Junction rectifier.
G
D
OM6017SA - OM6020SA
S
TC = 25 C, IS = -13 A, VGS = 0 TJ = 150 C, IF = IS, dlF/ds = 100 A/ms
3.1
OM6017SA - OM6020SA ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)
Parameter VDS VDGR ID @ TC = 25C ID @ TC = 100C IDM VGS PD @ TC = 25C PD @ TC = 100C Junction To Case Junction To Ambient TJ Tstg Lead Temperature Drain-Source Voltage Drain-Gate Voltage (RGS = 1 M ) Continuous Drain Current2 Continuous Drain Current2 Pulsed Drain Current1 Gate-Source Voltage Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Linear Derating Factor Operating and Storage Temperature Range (1/16" from case for 10 secs.) -55 to 150 300 -55 to 150 300 -55 to 150 300 -55 to 150 300 C C OM6017SA OM6018SA OM6019SA OM6020SA Units 100 100 25 16 100 20 125 50 1.0 .020 200 200 25 16 80 20 125 50 1.0 .020 400 400 13 8 54 20 125 50 1.0 .020 500 500 11 7 40 20 125 50 1.0 .020 V V A A A V W W W/C W/C
1 Pulse Test: Pulse width 300 sec. Duty Cycle 2%. 2 Package Pin Limitation = 15 Amps
THERMAL RESISTANCE
RthJC RthJA Junction-to-Case Junction-to-Ambient 1.0 50 C/W C/W Free Air Operation
MECHANICAL OUTLINE
.144 DIA.
.940 .740 .540 .200 .100 2 PLCS. .040 .260 MAX
.545 .535
.050 .040
3.1
.290 .125 2 PLCS.
.250
.685 .665
.800 .790
.550 .530
.125 DIA. 2 PLS.
.540
123
.500 MIN.
1 Pin 1: Drain Pin 2: Source Pin 3: Gate
.150
2
3
.550 .510
.005
.150 .300
.040 DIA. 3 PLCS.
.045 .035 .150 TYP. .260 .249
.150 TYP.
PACKAGE OPTIONS
MOD PAK
Z-TAB
6 PIN SIP
NOTES: Standard Products are supplied with glass feedthroughs. For ceramic feedthroughs, add the letter "C" to the part number. Example - OMXXXXCSA MOSFETs are also available in Z-Tab, dual and quad pak styles - Please call the factory for more information.
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246

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